Electronic Devices
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TEM Probe
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RMT Ltd introduces new device - TEM Probe DX8070 for automated inspection of bulk crystals of thermoelectric material (TEM).
The devices is developed to examine in express mode bulk crystals of thermoelectric material made by crystal growth, hot pressing, extrusion and other manufacturing methods.
It is suitable for income control for thermoelectric materials.
FEATURES
- Seebeck Coefficient and Electric Conductivity
- Performance parameters profile along bulk crystal or mapping of wafers
- Automated inspection with data output
Specifications
Measuring Parameters
| Parameter measured | Units | Designation | Values | Accuracy, % |
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| Seebeck Coefficient | mV/K | a | 100...300 | 3 |
| Electrical Conductivity | 1/(Ohm·cm) | s | 300...2000 | 5 |
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Sample Dimensions
Parameter Units Min Max Ingot Length mm 40 110 Diameter mm 20 25* Wafers Thickness mm 0.1 30 Diameter mm 20 25* Note: * - larger diameter is available on request.
Technical Parameters
Parameter Units Values Step between the nearest Points, d mm 0.1-100 Accuracy of the Probe Positioning, Dx mm 0.02 Positioning Repeatability, dx mm ±0.04 Total Probe Travel Length, L mm 0...200 Voltage Range, U mV 0.01...2 Voltage Accuracy, DU mV ±3.5 Ambient Temperature Accuracy, DTamb K 0.5 Sample Electric Current, I A 0.5 - 5 Power Supply, AC V Power Supply, AC V 220+10/-15 Power Consumption, P W > 200 Operation Temperature, Ta °C 25±3 Ambient Humidity, RH % < 80
